Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

摘要

Influence of electron-electron relaxation processes on Auger recombinationrate in direct band semiconductors is investigated. Comparison betweencarrier-carrier and carrier-phonon relaxation processes is provided. It isshown that relaxation processes are essential if the free path length ofcarriers doesn't exceed a certain critical value, which exponentially increaseswith temperature. For illustration of obtained results a typical InGaAsPcompound is used.